Shallow implanted SiC spin qubits used for sensing an internal spin bath and external YIG spins
نویسندگان
چکیده
Shallow VSi (V2) spin qubits are created below the SiC surface by low energy ion implantation through a sacrificial SiO 2 layer. A shallow V2 coherence time of 220 μs at 100 K is demonstrated, as well sensing external YIG spins.
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ژورنال
عنوان ژورنال: Nanoscale
سال: 2021
ISSN: ['2040-3372', '2040-3364']
DOI: https://doi.org/10.1039/d1nr02877d